View CED342310_5055982.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -18A, RDS(ON) = 45m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED3423/CEU3423
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
20
-18 -72 31 0.25 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 4 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 3. 2010.Apr http://www.cetsemi.com
CED3423/CEU3423
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -10A VDS = -15V, ID = -10A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 11 5 30 7 12.5 2 2.4 -10 -1.3 22 10 60 14 16 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250A VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250A VGS = -10V, ID = -10A VGS = -4.5V, ID = -5A VDS = -15V, ID = -10A -1 37 62 4.5 640 135 95 Min -30 -1 100 -100 -3 45 80 Typ Max Units V
A
nA nA V m m S pF pF pF
VDS = -15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CED3423/CEU3423
50 -VGS=10,8,6V 25
-ID, Drain Current (A)
-ID, Drain Current (A)
40 30 20 10 0
20 15 10 TJ=125 C 5 0 25 C 0 1 2 3 4 5 -55 C
5
-VGS=3V
0
2
4
6
8
10
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25 Ciss
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=-10A VGS=-10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=-250A
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED3423/CEU3423
-VGS, Gate to Source Voltage (V)
10 V =-15V DS ID=-10A 10
2
RDS(ON)Limit
10ms 100ms 1s DC
-ID, Drain Current (A)
8 6 4 2 0
10
1
10
0
0
4
8
12
16
10
-1
TC=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
10%
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4

▲Up To Search▲

Price & Availability of CED342310

	To Download CED342310 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .